1020l sr olt age @i 10.0 a 150 a 0.2 unit characteristic symbol v 250 pf 2.5 c/w -65 to +150 c sr1020l ? sr10200l features ! sc hottk y barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d mechanic al d ata ! cas e: do -201ad, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rm s reverse voltage v r(rm s) av erage rectified output current @t l = 95 c (not e 1) i o non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm forward v f = 10 . 0a v fm pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 0.2 20 ma t y pical junction capacitance (note 2) c j t y pical thermal resistance (note 1) r ja operat i ng and storage temperature range t j , t stg note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 sr1020l ? sr10200l v 10 0.45 0. 55 0.80 0.90 v 20 14 30 21 40 28 50 35 60 42 80 56 100 70 150 105 200 140 z ibo seno electronic engineering co., ltd. www.senocn.com do-201 a d dim m in max a 25.4 ? b 8. 50 9. 50 c 1.20 1.30 d 5. 0 5.60 all d i mensions in mm do-201 a d dim m in max a 24.5 ? b 7. 20 9. 50 c 1.10 1.30 d 5. 00 5.60 all d i mensions in mm 1030l sr 1040l sr 1050l sr 1060l sr 1080l sr 10100l sr 10150l sr 10200l sr 0.85 10.0a low vf sc hott ky barrier diode a l l d a t a s h e e t
2 of 2 sr1020l ? sr10200l sr1020l ? sr10200l z ibo seno electronic engineering co., ltd. www.senocn.com c , cap acit ance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r 100 1000 3000 0.1 1.0 10 100 t = 25 c j 2 0-40 50- 100 0 20 40 60 80 100 120 140 i , inst antaneous reverse current (ma) r percent of ra ted peak reverse voltage (%) fig. 5 typical reverse characteristics t = 125 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 0.001 0 025 5 0 75 100 125 150 i a verage forward current (a) (av), t , lead temperature ( c) fig. 1 forward current derating curve l 2 4 8 10 6 resistive or inductive load 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 i , instant aneous forward current (a) f v , inst ant aneous forward voltage (v) fig. 2 typical forward characteristics f 100 20 ?40 50 ? 60 80 ? 200 0 1 10 100 i , peak for w ard surge current (a) fsm number of cycles a t 60hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) 30 60 90 120 150 a l l d a t a s h e e t
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